Simulation of E-mode β-Ga2O3 Interlayer-Based Vertical Trench Power MOSFET with Fast-Switching Performance at High Temperatures

Xiaoqing Chen; Feng Li; Herbert Hess

doi:10.1109/ACCESS.2025.3589533

Simulation of E-mode β-Ga2O3 Interlayer-Based Vertical Trench Power MOSFET with Fast-Switching Performance at High Temperatures

Xiaoqing Chen, Feng Li Herbert Hess

IEEE Access, pp.129493-129503

07/16/2025

: https://doi.org/10.1109/ACCESS.2025.3589533

Apertures

boost converter

current blocking layer

Doping

Electron mobility

enhancement-mode

high temperature

Logic gates

MOCVD

MOSFET

Nitrogen

Performance evaluation

power MOSFET

Semiconductor process modeling

Silicon

switching performance

trench gate

vertical interlayer channel

β-Ga<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3

In this paper, an interlayer-based vertical trench power β-Ga 2 O 3 MOSFET with nitrogen-doped current blocking layers (CBLs) is designed and simulated in Sentaurus TCAD. The proposed MOSFET achieves Enhancement-mode (E-mode) operation and better performance than the reported E-mode β-Ga 2 O 3 transistors with CBLs. The DC characteristics present a higher on/off current ratio of 10 8 than the reported β-Ga 2 O 3 U-shaped MOSFETs, and a higher on-current density of 94 A/cm 2 , a lower specific on-resistance of 26.5 mΩ·cm 2 , and a larger breakdown voltage of 483 V than the reported β-Ga 2 O 3 current aperture vertical MOSFETs. The thermal characteristic study shows that the proposed device can work up to 500 °C in E-mode operation with an on-current density of 35 A/cm 2 and on-resistance of 104 mΩ.cm 2 . The dynamic characteristics are explored, and excellent switching performance with a turn-on time of 29 ns and a turn-off time of 48 ns at room temperature is achieved. At 500 °C, the turn-on time slightly increases to 38 ns due to the reduced electron mobility, and the turn-off time is still in the order of 40 ns because of the less discharge time of the lower on-state gate charge. The proposed MOSFET is examined in a boost converter application, and an efficiency of 89% and a voltage conversion ratio of 1.42 for a duty cycle of 40% are obtained. Our work shows the proposed β-Ga 2 O 3 MOSFET has great potential as a high-speed switch in power electronics applications.

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url

https://doi.org/10.1109/ACCESS.2025.3589533

: Simulation of E-mode β-Ga2O3 Interlayer-Based Vertical Trench Power MOSFET with Fast-Switching Performance at High Temperatures
: Xiaoqing Chen - University of Idaho, Electrical and Computer Engineering
Feng Li - University of Idaho, Electrical and Computer Engineering
Herbert Hess - University of Idaho, Electrical and Computer Engineering
: IEEE Access, pp.129493-129503
: IEEE
: the Micron Fundation
: 996816854901851
: Center for Secure and Dependable Systems; Electrical and Computer Engineering; Center for Clean Vehicle Technology
: English
: Journal article