Plasmon Resonance Effects in GaAs/AlGaAs Heterojunction Devices: An Analysis Based on Spectral Element Simulation

Journal article

IEEE Transactions on Electron Devices, Vol.61(5), pp.1477-1482

2014

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Title: Plasmon Resonance Effects in GaAs/AlGaAs Heterojunction Devices: An Analysis Based on Spectral Element Simulation
Creators: Feng Li
Publication Details: IEEE Transactions on Electron Devices, Vol.61(5), pp.1477-1482
Identifiers: 996631114101851
Academic Unit: Electrical and Computer Engineering
Language: English
Resource Type: Journal article