Numerical Simulation of High Electron Mobility Transistors based on the Spectral Element Method

Journal article

Peer reviewed

David P Klemer, Feng Li and Qing H Liu

Applied Computational Electromagnetics Society Journal, Vol.31(10), pp.1144-1150

2016

Files and links (1)

url

http://ws.isiknowledge.com/cps/openurl/service?url_ver=Z39.88-2004&rft_id=info:ut/000383653300001View

1 Record Views

Title: Numerical Simulation of High Electron Mobility Transistors based on the Spectral Element Method
Creators: David P Klemer
Feng Li
Qing H Liu
Publication Details: Applied Computational Electromagnetics Society Journal, Vol.31(10), pp.1144-1150
Identifiers: 996631497901851
Academic Unit: Electrical and Computer Engineering
Language: English
Resource Type: Journal article