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Influence of temperature, oxygen partial pressure, and microstructure on the high-temperature oxidation behavior of the SiC Layer of TRISO particles
Journal article   Peer reviewed

Influence of temperature, oxygen partial pressure, and microstructure on the high-temperature oxidation behavior of the SiC Layer of TRISO particles

Visharad Jalan, Adam Bratten, Meng Shi, Tyler Gerczak, Haiyan Zhao, Jonathan D. Poplawsky, Xiaoqing He, Grant Helmreich and Haiming Wen
Journal of the European Ceramic Society, Vol.45(2), p.116913
02/2025

Abstract

Atom probe tomography Oxidation Silicon carbide TRISO particle Electron Microscopy

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