Electronic properties of ZnO epilayers grown on c-plane sapphire by plasma-assisted molecular beam epitaxy

Journal article

Peer reviewed

Tim Murphy, D Y Chen, Emine Cagin and Jamie D Phillips

Journal of Vacuum Science and Technology B, Vol.23(3), pp.1277-1280

2005

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Title: Electronic properties of ZnO epilayers grown on c-plane sapphire by plasma-assisted molecular beam epitaxy
Creators: Tim Murphy
D Y Chen - University of Michigan–Ann Arbor
Emine Cagin - University of Michigan–Ann Arbor
Jamie D Phillips - University of Michigan–Ann Arbor
Publication Details: Journal of Vacuum Science and Technology B, Vol.23(3), pp.1277-1280
Identifiers: 996632223001851
Academic Unit: University of Idaho
Language: English
Resource Type: Journal article