Abstract
This work explored the gold stud bump-based flipchip metal-to-metal bonding for high-temperature (600 degrees C) SiC IC integration and packaging. Gold stud bumps were created onto the dummy SiC chips using a standard wire bonder with one mil gold wires. Different substrate metal conductor materials, including electroplated gold, screen-printed gold, and sputtered thin-film gold, were used. The dummy chips with gold stud bumps were flip-chip bonded to the various substrates and subjected to a thermal aging process at 600 degrees C for 2, 4, and 6 days. Die shear test was used to test the bonding reliability after days of the thermal aging process, which shows that the electroplated gold has the best bonding reliability for long-term high temperatures applications such as Venus surface explorations. 1 mu m thick platinum conductors on the SiC host substrate warped and detached from the titanium adhesion layer after days of thermal aging, indicating that the platinum film must be thinner to service long-term high-temperature application purposes.