Electronic Properties Of ZnO Epilayers Grown On C-Plane Sapphire By Plasma -Assisted Molecular Beam Epitaxy

Conference proceeding

Journal of Vacuum Science and Technology B, Vol.23(3), pp.1277-1280

North American Molecular Beam Epitaxy Conference, 22nd (Banff, Canada, 10/10/2004–10/13/2004)

01/01/2005

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Title: Electronic Properties Of ZnO Epilayers Grown On C-Plane Sapphire By Plasma -Assisted Molecular Beam Epitaxy
Creators: Timothy E Murphy (Author) - University of Idaho, College of Law
Publication Details: Journal of Vacuum Science and Technology B, Vol.23(3), pp.1277-1280
Conference: North American Molecular Beam Epitaxy Conference, 22nd (Banff, Canada, 10/10/2004–10/13/2004)
Identifiers: 996755749601851
Academic Unit: College of Law
Resource Type: Conference proceeding